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IXFN 20N120
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
miniBLOC, SOT-227 B
g fs
C iss
C oss
C rss
t d(on)
V DS = 20 V; I D = 0.5 ? I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
15
27
7400
560
100
25
S
pF
pF
pF
ns
t r
t d(off)
t f
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 ? (External),
45
75
20
ns
ns
ns
M4 screws (4x) supplied
Dim. Millimeter
Min. Max. Min.
A 31.50 31.88 1.240
Inches
Max.
1.255
Q g(on)
160
nC
B
C
7.80
4.09
8.20
4.29
0.307
0.161
0.323
0.169
Q gs
Q gd
R thJC
R thCK
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
35
60
0.05
0.16
nC
nC
K/W
K/W
D
E
F
G
H
J
K
L
4.09
4.09
14.91
30.12
38.00
11.68
8.92
0.76
4.29
4.29
15.11
30.30
38.23
12.22
9.60
0.84
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
M
N
O
P
Q
R
S
T
U
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
I S
I SM
V SD
V GS = 0 V
Repetitive;
pulse width limited by T JM
I F = I S , V GS = 0 V,
20
80
1.5
A
A
V
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
t rr
Q RM
I RM
I F = I S , -di/dt = 100 A/ μ s, V R = 100 V
1.4
8
300
ns
μ C
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
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